bar 65-02w semiconductor group jun-18-1998 1 silicon rf switching diode preliminary data low loss, low capacitance pin-diode band switch for tv-tuners series diode for mobile communication transmit-receiver switch 1 ves05991 2 type marking ordering code pin configuration package bar 65-02w n q62702-a1216 1 = c 2 = a scd-80 maximum ratings parameter symbol value unit diode reverse voltage v v r 30 forward current i f 100 ma operating temperature range c t op - 55 ...+125 - 55 ...+150 storage temperature t stg semiconductor group 1 1998-11-01
bar 65-02w semiconductor group jun-18-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. dc characteristics reverse current v r = 20 v i r - - 20 na forward voltage i f = 100 ma - 0.93 v 1 v f ac characteristics pf diode capacitance v r = 1 v, f = 1 mhz v r = 3 v, f = 1 mhz 0.6 0.57 - - c t 0.9 0.8 forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - w 0.65 0.56 0.95 0.9 series inductance l s - 0.6 - nh semiconductor group 2 1998-11-01
bar 65-02w semiconductor group jun-18-1998 3 forward current i f = f ( v f ) t a = 25c 400 500 600 700 800 mv 1000 v f -1 10 0 10 1 10 2 10 3 10 ma i f forward resistance r f = f ( i f ) f = 100mhz 10 -1 10 0 ma i f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ohm 3.0 r f diode capacitance c t = f ( v r ) f = 1mhz 0 1 2 3 4 5 6 7 8 v 10 v r 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1.0 c t diode capacitance c t = f ( v r ) f = 100mhz 0 1 2 3 4 5 6 7 8 v 10 v r 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1.0 c t semiconductor group 3 1998-11-01
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